NVE Granted Magnetothermal MRAM Patent

NVE Corporation today was granted patent number 7,813,165, titled “Magnetic Memory Layers Thermal Pulse Transitions,” relating to Magnetothermal Magnetoresistive Random Access Memory (MRAM).

MRAM is an integrated-circuit memory which is fabricated with nanotechnology and which uses electron spin to store data. Magnetothermal MRAM is an MRAM design that uses a combination of magnetic fields and ultra-fast heating from electrical current pulses to reduce the energy required to write data.

NVE has more than 50 U.S. patents, and more than 100 patents worldwide issued, pending, or licensed from others. Links to the new patent and NVE’s other U.S. patents can be found on the Patents page of the company’s Website.

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store and transmit information. The company manufactures high-performance spintronic products including sensors and couplers that are used to acquire and transmit data. NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM.

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