IR’s Family of TSOP-6 HEXFET® MOSFETs Offer Cost-Effective, Flexible Solution for Low Power Applications
Featuring very low on-state resistance (RDS(on)) to significantly cut conduction losses, the new power MOSFETs are available as 20 V and 30 V devices in N-and P-Channel configurations with a maximum gate drive from 12Vgs to 20Vgs.
“IR’s new portfolio of power MOSFETs in a TSOP-6 package complement our existing devices housed in SOT-23 and SO-8 packages to provide customers more flexibility in designing their systems. As a result of the low RDS(ON) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost,” said Stéphane Ernoux, Director, IR’s Power Management Devices Business Unit.
All of the new devices are MSL1 and RoHS compliant containing no lead, bromide or halogen.