IR Introduces Family of Rugged, Reliable Automotive-Qualified Power MOSFETs Housed in TO-220 Fullpak Package
The new 55V planar devices are available as standard and logic level gate drive MOSFETs in N and P channel configuration, and offer a maximum on-state resistance (Rds(on)) as low as 8mOhm. The TO-220 fullpak package eliminates the need for additional insulating hardware to simplify design and improve overall system reliability.
“Based on IR’s proven planar technology, this new family of MOSFETs available in a TO-220 FullPak package performs well in linear mode and in automotive applications where a rugged, reliable MOSFET is needed to drive highly inductive loads,” said Jifeng Qin, Product Manager, Automotive MOSFETs, IR’s Automotive Products Business Unit.
IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection as part of IR’s automotive quality initiative targeting zero defects. AEC-Q101 qualification requires that there is no more than a 20 percent change in Rds(on) after 1,000 temperature cycles of testing. However, in extended testing IR’s new AU bill of materials demonstrated a maximum Rds(on) shift of less than 10% at 5,000 temperature cycles, showing the strength and ruggedness of the bill of materials.
The new devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials.