Increasing energy prices and environmental concerns around carbon emissions are continuously driving demand for higher performance power discrete components; especially in high power inductive and inverter applications. These new 1200 volt (V) rated IGBTs utilize deep trench technology and state-of-the-art wafer thinning and processing techniques to enable very low turn-off losses while maintaining a low "ON" state voltage during turn-on, which results in lower switching and conduction losses. These devices are offered with a choice of 15 ampere (A), 20 A and 25 A current ratings and are co-packaged with a very low forward drop and soft-recovery fast rectifier to meet stringent customer requirements for high efficiency while providing a space efficient complete solution.
"ON Semiconductor has been a market leader in delivering high performance and reliable IGBTs to the automotive segment for more than a decade," said John Trice, senior director and general manager for ON Semiconductor's Power Discrete Division. "The new 1200 V series of high performance IGBTs leverages our intellectual property and competencies in high voltage trench and wafer processing technologies while providing customers in a broad range of market sectors with a high quality and robust solution for their demanding power applications".