TriQuint GaN, mmWave & BTS Shine at IMS 2012

TriQuint met with many colleagues, partners and industry leaders at IMS MTT-S 2012 in Montreal, discussing our new range of GaN and GaAs solutions. TriQuint showcased newly-released GaN products including TGA2572-FL, TGA2579-FL and TGA2593-GSG (available August 1st), while sharing its RF design expertise in many special sessions. TriQuint’s innovative new GaN packaged transistor, T1G6003028-FS offers 3dB more gain than competing devices, which can cut the number of stages in amplifier designs by 50%.

TriQuint also released VSAT and PtP / mmWave innovations that integrate functions for smaller BOMs; the new TGA2527-cuts power consumption 20%. New TriQuint BTS LNAs offer the lowest noise figure of any packaged, integrated solution (as low as 0.4dB). Contact product marketing or visit our sales webpage for details.

Comments

Popular posts from this blog

What is Class I Division 2?

FUSE SIZING CONSIDERATIONS FOR HIGHER EFFICIENCY MOTORS

7/8 16UN Connectors that Provide 600 Volts and 15 Amps