Shindengen Electric Manufacturing Co., Ltd. (headquartered in Otemachi, Chiyoda-ku, Tokyo, Japan) developed the 5th generation for the SU series of Schottky barrier diodes (referred to as SBD below). The 5th generation trench type structure shows significant improvements in the trade-off between VF (forward voltage) and IR (reverse current). For the initial release of the first series, we began selling the “SG40SC10U” this last September in 2010.
- Using trench technology, the trade-off between VF and IR has been significantly improved. (15% improvement from our J series)VF 0.76V max. Condition: IF (forward current) = 20A; Tc (case temp.) = 25°C
- VRM(peak reverse voltage) 100V; current capacitance 40A
- TO-220 full mold (FTO-220G)
The trade-off between VF and IR was significantly improved in the newest 5th generation SU Series that we recently developed which incorporates trench technology. y using the SU Series, the customer can expect better overall power efficiency and also a reduction in heat generation on the diodes themselves . With respect to the basic power needs, this series also contributes to a more compact, lightweight and highly-efficient product.