Monday, June 11, 2012

Fairchild Semiconductor's 3.3x3.3mm Power Clip Asymmetric Dual MOSFET Helps Designers Achieve Highest Power Density and Efficiency in Power Supply Designs

As power requirements increase to provide more functionality in high-density embedded DC-DC power supplies, power engineers are challenged with providing higher power density and efficiency in less board space. Fairchild Semiconductor (NYSE: FCS) helps designers meet this system challenge with the introduction of the FDPC8011S, a 25V, 3.3x3.3mm, low-profile Dual Power Clip Asymmetric N-Channel Module.

Developed to operate at higher switching frequencies, the FDPC8011S consists of a 1.4mΩ SyncFET™ technology and a 5.4mΩ control, low-figure of merit N-Channel MOSFET integrated in an all-clip package, which helps reduce the capacitor count and inductor size in synchronous buck applications. The device's source down, low–side allows for simple placement and routing, enabling a more compact board layout and achieving optimal thermal performance. The FDPC8011S delivers over 25A output current and has a 2X output current capacity improvement over other conventional 3x3mm dual MOSFETs.

Features and Benefits:
  • Control N-Channel MOSFET with RDS(ON) = 5.4mΩ Typical, (7.3mΩ Max) at VGS = 4.5V
  • Synchronous N-Channel MOSFET with RDS(ON) = 1.4mΩ Typical, (2.1mΩ Max) at VGS = 4.5V
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS-compliant

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