Fairchild Semiconductor's 3.3x3.3mm Power Clip Asymmetric Dual MOSFET Helps Designers Achieve Highest Power Density and Efficiency in Power Supply Designs

As power requirements increase to provide more functionality in high-density embedded DC-DC power supplies, power engineers are challenged with providing higher power density and efficiency in less board space. Fairchild Semiconductor (NYSE: FCS) helps designers meet this system challenge with the introduction of the FDPC8011S, a 25V, 3.3x3.3mm, low-profile Dual Power Clip Asymmetric N-Channel Module.

Developed to operate at higher switching frequencies, the FDPC8011S consists of a 1.4mΩ SyncFET™ technology and a 5.4mΩ control, low-figure of merit N-Channel MOSFET integrated in an all-clip package, which helps reduce the capacitor count and inductor size in synchronous buck applications. The device's source down, low–side allows for simple placement and routing, enabling a more compact board layout and achieving optimal thermal performance. The FDPC8011S delivers over 25A output current and has a 2X output current capacity improvement over other conventional 3x3mm dual MOSFETs.

Features and Benefits:
  • Control N-Channel MOSFET with RDS(ON) = 5.4mΩ Typical, (7.3mΩ Max) at VGS = 4.5V
  • Synchronous N-Channel MOSFET with RDS(ON) = 1.4mΩ Typical, (2.1mΩ Max) at VGS = 4.5V
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS-compliant

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