Enpirion Announces EN2300 Family of 12 Volt Integrated Power IC Solutions Delivering the Industry’s Highest Power Density
Enpirion’s proprietary high-speed transistor structure implemented in 0.18u LDMOS process achieves the industry’s best Figure of Merit (FOM = Gate Charge x On-state Resistance in units of milli-ohm nano-coulombs) to operate at high frequency while reducing switching losses. “Enpirion focuses on driving high speed, low-loss power MOSFET technology as the key enabler for delivering the highest efficiency solutions with leading power density,” says Dr. Ashraf Lotfi, Enpirion Chief Technology Officer. “Our technology FOM of 20 provides a 40% improvement over alternative LDMOS, 73% versus VDMOS, and 33% better than high performance GaN.”
The EN2300 devices offer compact solution footprints from 4 Amp at 190mm2 to 15 Amp at 308mm2 which represents up to a sixty percent area reduction versus competing alternatives at comparable performance. The devices support an input voltage range of 4.5 to 14V and an output voltage range of 0.6 to 5V.
“The broad market push towards reducing power, space, and cost while improving reliability is driving the accelerated migration from traditional DC-DC converters to integrated power-systems-in-a-package at a projected compound annual growth rate (CAGR) of 34.4% from 2011 to 2016,” said Jeff Shepard, President of Darnell Group, the leading source for worldwide strategic information covering the full spectrum of power electronics. “Enpirion’s new EN2300 family is a strong addition to the company’s already successful DC-DC PowerSoC portfolio and exemplifies the types of products we consider key in enabling this rapid growth.”