Dual-Power Mosfets Suitable for Space Applications
International Rectifier (IR) has introduced a range of radiation-hardened Mosfets for low-power lightweight space applications requiring a small footprint, such as satellite payload power systems. The LCC-6 range of Rad-Hard dual-power Mosfets is housed in a compact hermetic LCC-6 surface-mount package. Offering dimensions as compact as 0.25 x 0.17in (6.22 x 4.32mm) with a low profile of 0.08in, the devices are intended to help reduce both board space and weight.
The new 60V logic-level devices are available in 2 N-channel, 2 P-channel or 1N and 1P-channel configuration co-packaged in a six-pad LCC-6 surface-mount package. By combining two Mosfets in one small package, IR's new LCC-6 devices can replace two UB or LCC-3 packages, reducing the number of components, board area and weight in low-power space applications. As logic-level Mosfets, they can be driven directly from digital circuitry, reducing external component count.
The new devices use IR's R7 logic-level, Rad-Hard Mosfet technology, which features low on-state resistance (RDS[on]), fast switching and small size, making the new Mosfets suitable alternatives to traditional bipolar devices. The Mosfets are rated at 100krad (Si) total ionising dose (TID), with a 300krad (Si) TID rating also available. Devices are single-event effect (SEE) rated at 85MeV/(mg/cm2) LET and are available as commercial-off-the-shelf (COTS) systems or screened to the MIL-PRF-19500 space level.
The new 60V logic-level devices are available in 2 N-channel, 2 P-channel or 1N and 1P-channel configuration co-packaged in a six-pad LCC-6 surface-mount package. By combining two Mosfets in one small package, IR's new LCC-6 devices can replace two UB or LCC-3 packages, reducing the number of components, board area and weight in low-power space applications. As logic-level Mosfets, they can be driven directly from digital circuitry, reducing external component count.
The new devices use IR's R7 logic-level, Rad-Hard Mosfet technology, which features low on-state resistance (RDS[on]), fast switching and small size, making the new Mosfets suitable alternatives to traditional bipolar devices. The Mosfets are rated at 100krad (Si) total ionising dose (TID), with a 300krad (Si) TID rating also available. Devices are single-event effect (SEE) rated at 85MeV/(mg/cm2) LET and are available as commercial-off-the-shelf (COTS) systems or screened to the MIL-PRF-19500 space level.
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