Next-Generation 400 V, 500 V, and 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down to 0.130 Ω, FOM Down to 7.65 Ω-nC, and Currents From 3 A to 36 A

Vishay Intertechnology, Inc. (NYSE: VSH) today released the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.

Based on a new high-voltage stripe technology, the D Series MOSFETs released today enable new levels of efficiency and power density. The device’s stripe design − with a smaller die size and terminations − lowers the total gate charge by 50 % compared to previous-generation solutions, while increasing switching speed and reducing on-resistance and input capacitance.

The 400 V, 500 V, and 600 V devices feature on-resistance down to 0.17 Ω, 0.13 Ω, and 0.34 Ω, respectively. The ultra-low on-resistance values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.

With gate charges down to 9 nC for the 400 V devices, 6 nC for the 500 V devices, and 45 nC for the 600 V devices, the D Series MOSFETs offer best-in-class gate charge times on-resistance − a key figure of merit (FOM) for MOSFETs used in power conversion applications − down to 7.65 Ω-nC, 15.6 Ω-nC and 12.3 Ω-nC, respectively.

The new D Series MOSFETs feature simple gate-drive circuitry, high body diode ruggedness, and are easy to design into more compact, lighter, and cooler end products. The devices are RoHS compliant, halogen-free according to the IEC 61249-2-21definition, and avalanche (UIS) rated for reliable operation.


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