ON Semiconductor Introduces High Performance Field Stop IGBTs for High Efficiency Power Conversion
Increasing energy prices and environmental concerns around carbon emissions are continuously driving demand for higher performance power discrete components; especially in high power inductive and inverter applications. These new 1200 volt (V) rated IGBTs utilize deep trench technology and state-of-the-art wafer thinning and processing techniques to enable very low turn-off losses while maintaining a low "ON" state voltage during turn-on, which results in lower switching and conduction losses. These devices are offered with a choice of 15 ampere (A), 20 A and 25 A current ratings and are co-packaged with a very low forward drop and soft-recovery fast rectifier to meet stringent customer requirements for high efficiency while providing a space efficient complete solution.
"ON Semiconductor has been a market leader in delivering high performance and reliable IGBTs to the automotive segment for more than a decade," said John Trice, senior director and general manager for ON Semiconductor's Power Discrete Division. "The new 1200 V series of high performance IGBTs leverages our intellectual property and competencies in high voltage trench and wafer processing technologies while providing customers in a broad range of market sectors with a high quality and robust solution for their demanding power applications".