The Low-Profile Infrared Midled Takes up Very Little Space but Offers High Radiant Intensity

The infrared Mini Midled from Osram Opto Semiconductors is only 0.9 millimeters high but this tiny device produces a narrow and intense beam of infrared light. With its radiant intensity of 60 milliwatts per steradian (mW/sr) at 100 milliamperes (mA) it easily outperforms other comparable devices. This low-profile surface-mountable emitter is ideal particularly for proximity sensors in devices where space is limited and for light barriers.

In many sensor applications it is not only the optical power of an emitter that is important but also whether the available light is widely spread or concentrated in a narrow high-power beam. This is characterized by the half-angle. The radiant intensity (measured in watts per steradian) indicates the optical power within a solid angle and therefore defines the intensity of the emitted light beam.

The great advantage of the new Mini Midled is its half-angle of 17°, producing a narrow light beam and a radiant intensity of 60 mW/sr at 100 mA. This is achieved by focusing the light with a metalized reflector integrated in the device. The new infrared LED offers a high output despite its exceptionally small dimensions of just 2.3 x 1.95 x 0.9 mm.

The Mini Midled is the second SMT device from Osram Opto Semiconductors in MID (Molded Interconnected Device) technology, following the 1.6 mm high Midled. Thanks to new package technologies, Osram has managed to reduce the total height of the new infrared emitter to less than one millimeter but the new device can still be processed in the usual way.

Small and powerful infrared diodes with a wavelength of 850 nm, such as the low-profile narrow-beam Mini Midled, offer major benefits in applications where there is little space but high radiant intensity is needed. Typical applications include light barriers, smart phones and optical touch screens.

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