SSI Announces Sampling of RLDRAM(R) 3 Memory - Helps Enable 100G Ethernet and Transport Applications

Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today announced that it is sampling RLDRAM 3 memory. RLDRAM 3 memory offers a 576Mb density with the DRAM industry's fastest random access times (tRC). The device is ideally suited to 100G networking applications such as Packet Optical Transport, Carrier Ethernet Switches and Routers (CESR), and Core and Edge Routers.

Service providers are combining residential, business, and mobile services onto a single IP network. This is driving the need for a cost-effective, high-performance memory with fast random access rates (tRC). RLDRAM 3 memory offers a new Multibank WRITE feature that allows random READ accesses every 2ns – on par with high-speed SRAM but with the density and cost-effectiveness that comes with DRAM.

"We are pleased to announce our sampling of RLDRAM 3 memory as it expands our portfolio of high-speed memories, which also includes RLDRAM 2 memory and QUAD/DDR-II SRAMs," said Pat Lasserre, ISSI Director of Strategic Marketing. "Our addition of RLDRAM 3 has been well received by our customers in the communications and networking space as evidenced by the high demand for qualification samples. And as these customers require long-term support, we are committed to providing RLDRAM 3 memory for many years to come."

ISSI will offer RLDRAM 3 memory in Industrial and Commercial temperature ranges and in Leaded and Lead-free packages.

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