M/A-COM Technology Solutions Announces New GaN HEMT Pulsed Power Transistor
The MAGX-002735-040L00 is a gold metalized, internally matched, GaN on SiC, RF power transistor that exhibits excellent performance when operated at +50 V, class AB operation, 40 W peak output, using a 300 µs pulse and 10% duty cycle pulsed signal. Leveraging state of the art wafer fabrication processes, the transistor provides high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding needs.
Based on extensive HTOL RF accelerated life testing, quantifiable test results demonstrate this high performance product is designed to provide an MTTF of 600 years or better.
“The 800 MHz of instantaneous bandwidth and rugged performance makes this versatile device an excellent choice as a driver stage or output stage for any s-band radar power amplifier application,” said Gary Lopes, Senior Director for RF Power Technologies.
Manufactured in a thermally enhanced, Cu/Mo/Cu, flanged ceramic package, the MAGX-002735-040L00 boasts excellent thermal performance as well as high breakdown voltages that allow for reliable and stable operation in extreme mismatched load conditions. Operating at +50 V, class AB, the pulsed power transistor provides 40 W of peak power at 55% drain efficiency with a minimum gain of 10.5 dB across the full 2.7 to 3.5 GHz frequency band.