Infrared Transmitters with Customer-Selected Operating Parameters

Lumex is announcing its ability to create infrared (IR) transmitters with operating parameters chosen by customers for their specific applications.  Available in moderate production quantities, these new devices allow designers to move beyond the restrictions imposed by today's limited selection of off-the-shelf parts.  Lumex's application-specific IR transmitters mean solutions can be developed for design challenges formerly thought unsolvable.  Applications expected to benefit from these devices include medical diagnostic and therapeutic equipment, fluid and gas analysis instruments, industrial process controls, electronic security systems, pollution and energy controls, and military and avionics control systems.

Lumex is able to offer these semi-custom devices through direct control, within the foundry level, over liquid-phase epitaxy, metallization, photo-lithography, grinding and dicing processes.  The result is a chip whose parameters are a very tight match to the designer’s requirements.  Furthermore, this foundry allows Lumex to offer these application specific IR transmitters in very reasonable production quantities.

Customer-specifiable parameters include emitted wavelength, power output level, and package style.  Wavelengths of 750 - 1400 nanometers are available, with the ability to reach 2200 nanometers for special applications.  Narrow wavelength ranges are also available.Radiated power and wavelength range can be specified to design requirements and accomplished by adjusting chip chemistry, chip size and metallization parameters.

Packaging choices include lead-frame epoxy, SMT carriers, and all type of hermetic TO-xx metal cans for the ultimate in performance and reliability.  For those customers who prefer to do their own die and wire bonding, chips on skins are also available.

Lumex application-specific IR transmitters are available in a wide range of chip chemistries including AiGaAs/GaAS, AlGaAs/AlGaAS, InGaAs/GaAs and InGaAs/InP, with chip crystalline structures in MQW, DDH and DH architectures.

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