Bipolar Transistors For Power Management Circuits

Diodes Incorporated has introduced 20V NPN and PNP bipolar transistors in the ultra-small DFN1411-3 surface-mount package, increasing the power density and efficiency of power management circuits. The transistors have been designed on the company's Generation 5 matrix emitter bipolar process. With a footprint measuring 1.1 x 1.4mm and an off-board height of 0.5mm, the complementary ZXTN26020DMF and ZXTP26020DMF devices enable portable product miniaturisation while offering improvements in both electrical and thermal performance.

Suiting Mosfet and IGBT gate driving, DC-DC conversion and general switching duties, the miniature transistors are a space-saving alternative to larger SOT23 packaged parts and provide excellent thermal performance, having a minimum FR-4 PCB power dissipation rating of 0.38W for its footprint, according to the company. High-gain, low-saturation and fast-switching devices, the bipolars are also characterised by a high continuous current handling capability. The maximum collector current ratings are 1.5A for the NPN and -1.25A for the PNP. The ZXTN26020DMF and ZXTP26020DMF transistors are priced at USD0.14 (GBP0.09) in 10,000-piece quantities.

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