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OSRAM Opto Semiconductors Expands Its Leading Position in High-Quality, Thin-Film LEDs

Researchers at OSRAM Opto Semiconductors have succeeded in manufacturing high-performance prototypes of blue and white LEDs, in which the light-emitting gallium-nitride layers are grown on silicon wafers with a diameter of 150 millimeters. The silicon replaces the sapphire commonly used until now without a loss in quality. Already in the pilot stage, the new LED chips are to be tested under practical conditions, meaning that the first LEDs on silicon from OSRAM Opto Semiconductors could hit the market in just two years.

“Our investments in years of research are paying off, because we have succeeded in optimizing the quality of the gallium-nitride layers on the silicon substrates to the point where efficiency and brightness have reached competitive market levels. Stress tests we've already conducted demonstrate the high quality and durability of the LEDs, two of our traditional hallmarks," says Dr. Peter Stauss, project manager at OSRAM Opto Semiconductors. The company has acquired comprehensive expertise over the last 30 years in the process of artificial crystal growth (epitaxy), the foundation for this milestone in the development of new manufacturing technologies. The German Federal Ministry of Education and Research funds these activities as part of its “GaNonSi” project network.

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