Liner-Barrier Film For Advanced Memory Devices
Novellus Systems has developed a Directfill CVD tungsten nitride (WN) liner-barrier film for the tungsten via to copper interconnect application in advanced memory devices. The company said its liner-barrier technology replaces the conventional physical vapour deposition (PVD) Ti liner and metallo-organic chemical vapour deposition (MOCVD) TiN barrier film stack.
The WN film is deposited using Novellus' Altus platform with multi-station sequential deposition (MSSD) architecture and pulsed nucleation layer (PNL) technology. The Directfill process deposits an ultra-thin, 20 angstrom WN film with better barrier and resistivity properties compared with the conventional 200 angstrom thick PVD Ti - MOCVD TiN film stack. This ultra-thin film reduces the tungsten via resistance by up to 30 per cent and extends the tungsten via process to the 3Xnm technology and beyond.
The WN film is deposited using Novellus' Altus platform with multi-station sequential deposition (MSSD) architecture and pulsed nucleation layer (PNL) technology. The Directfill process deposits an ultra-thin, 20 angstrom WN film with better barrier and resistivity properties compared with the conventional 200 angstrom thick PVD Ti - MOCVD TiN film stack. This ultra-thin film reduces the tungsten via resistance by up to 30 per cent and extends the tungsten via process to the 3Xnm technology and beyond.
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