Imec Exhibits GaN-on-Si Double Heterostructure FET

Imec presented a GaN-on-Si double heterostructure field-effect transistor (FET) architecture for GaN-on-Si power switching devices at the recent International Electron Devices Meeting. The architecture meets the normally off requirements of power switching circuits and is characterised by low leakage and a high breakdown voltage, which are said to be essential parameters in reducing the power loss of high-power switching applications. High-voltage power devices are traditionally based on Si-Mosfet structures. However, for a number of applications, Si power devices have reached the intrinsic material limits.

GaN compounds are described as the best candidates to replace Si power devices thanks to their high band gap (transport properties) and their high electrical breakdown field. However, the cost of GaN power devices is high. GaN epilayers grown on large-diameter Si wafers, potentially measuring up to 200mm, offer a lower-cost technology compared to other substrates. Imec obtained a high breakdown voltage of almost 1,000V combined with low on-resistance by growing a SiN/AlGaN/GaN/AlGaN double heterostructure FET structure on a Si substrate.

By combining its double heterostructure FET architecture with in-situ SiN grown in the same epitaxial sequence as the III-nitride layers, the company obtained e-mode device operation. This is typically required in applications for safety reasons. The fabrication is based on an optimised process for the selective removal of in-situ SiN. The resulting SiN/AlGaN/GaN/AlGaN double heterostructure FET is characterised by a breakdown voltage of 980V, an excellent uniformity and a low dynamic specific on-resistance.

Within Imec's industrial affiliation programme (IIAP) on GaN-on-Si technology, the company and its partners focus on the development of GaN technology for both power conversion and solid-state lighting applications. A goal of the programme is to lower GaN technology cost by using large-diameter GaN-on-Si and by leveraging on the scale of economics. Imec is inviting both integrated device manufacturers and compound semiconductor industry members to join the programme.

Comments

Post a Comment

Popular posts from this blog

What is Class I Division 2?

Image
A Class I Division 2 is a location: (1) In which volatile flammable gases, flammable liquid-produced vapors, or combustible liquid-produced vapors are handled, processed, or used, but in which the liquids, vapors, or gases will normally be confined within closed containers or closed systems from which they can escape only in case of accidental rupture or breakdown of such containers or systems or in case of abnormal operation of equipment, or (2) In which ignitable concentrations of flammable gases, flammable liquid-produced vapors, or combustible liquid-produced vapors are normally prevented by positive mechanical ventilation, and which might become hazardous through failure or abnormal operation of the ventilating equipment. Class I Division 2 Classification Class I Division 2 refers to the ANSI/ISA 12.12.01 standard. This standard was previously UL1604 until UL recommended the newer ANSI/ISA standard be used and that all hazardous location products be certified under this standa
Read more

FUSE SIZING CONSIDERATIONS FOR HIGHER EFFICIENCY MOTORS

Image
When selecting the proper fuse for short circuit protection in motor starting applications, it is important to not only ensure that the fuse will not nuisance open during motor start up times, but also that the fuse will coordinate as required with overload relays. When sizing fuses between 125% and 150% of the motor nameplate current, several advantages, including ease of coordination with an overload device, a smaller disconnect, and increased short circuit protection from a lower fuse rating, can be achieved. However, if sizing at this level prevents the motor from starting, it may then be necessary to increase the fuse ampere rating and it then becomes important to know the NEC sizing limitations. As of June 1, 2016, the US Department of Energy has mandated that newly manufactured electric motors will need to meet NEMA Premium® efficiency standards. As motor efficiencies increase, motor locked rotor currents can also be expected to increase. In addition to this, with across-the-lin
Read more

7/8 16UN Connectors that Provide 600 Volts and 15 Amps

TURCK announces new A-Size 3 and 4-pin 7/8 16UN powerfast™ connectors that provide up to 600 Volts and 15 Amps of power. These IP67 rated connectors provide a modular wiring system designed to handle high current applications for machine power distribution, while providing resistance to vibration commonly associated with conveyors, motors and material handling applications. The cordsets are available with a tray rated, exposed run PVC flexlife ® cable, with or without STOOW rating, and 14 AWG wires that allow you to replace hard wiring with a robust, quick disconnect system that saves the time and money spent installing a conduit system. The A-Size powerfast line offers male and female, straight connectors, standard and custom lengths, and pigtails or extensions. To make the system complete, fully encapsulated mating receptacles, with 1/2”-14 NPT mounting threads are available.
Read more